This standard describes the underlying physics and the operation of floating gate memory arrays, specifically, UV erasable EPROM, byte rewritable E 2 PROMs, and block rewritableflash EEPROMs. In addition, reliability hazards are covered with focus on retention, endurance,and disturb. There are also clauses on the issues of testing floating gate arrays and their hardness to ionizing radiation.
- Sponsor Committee
- EDS -
- Status
- Inactive-Withdrawn Standard
- Superseding
- 1005-1991
- Board Approval
- 1998-06-25
- History
-
- Withdrawn:
- 2004-01-16
- ANSI Approved:
- 1999-05-25
- Published:
- 1999-02-09
Working Group Details
- Society
- IEEE Electron Devices Society
- Sponsor Committee
- EDS -
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